page . 1 rev.0.4-aug.17.2009 BC847BFN3 npn general purpose transistors voltage 45 volts 250 mwatts features ? general purpose amplifier applications ? npn epitaxial silicon, planar design ? collector current ic = 100ma ? in compliance with eu rohs 2002/95/ec directives mechanical data case: dfn 3l, plastic terminals: solderable per mil-std-750, method 2026 marking: ae current absolute ratings thermal characteristics note 1: transistor mounted on fr-4 board 70 x 60 x 1mm. 0.042(1.05) 0.037(0.95) 0.013(0.32) 0.008(0.22) 0.014(0.36) 0.013(0.32) 0.008(0.22) 0.002(0.05) max. 0.026(0.65) 0.021(0.55) 0.0 (0.55) 0.047(0.45) 22 0.0 (0.55) 0.047(0.45) 22 0.0 (0.20) 0.004(0.10) 08 0.0 (0.20) 14 0.0 (0.20) 0.004(0.10) 08 dfn 3l dfn 3l unit : inch(mm) unit : inch(mm) parameter symbol value units collector - e mitter voltage v ceo 45 v collector - b ase voltage v cbo 50 v emitter - b ase voltage v ebo 6.0 v collector current - c ontinuous i c 100 ma pan jit reserves the right to improve product design,functions and reliability without notice parameter symbol value units max power dissipation (note 1) p tot 250 mw thermal resistance , junction to ambient r ? ja 500 o c/w junction temperature t j -55 to +150 o c storage temperature t stg -55 to +150 o c 1 2 3 1 2 3
page . 2 rev.0.4-aug.17.2009 electrical characteristics (t j =25 o c, unless otherwise noted) retemara pl obmy sn oitidnoctse t. ni m. py t. xa mt inu scitsiretcarahcffo nwodkaerbrettime-rotcelloc egatlov v )rb (o ec i c am01 =5 4--v nwodkaerbrettime-rotcelloc egatlov v )rb (s ec i c v,au01= be 0 =0 5--v egatlovnwodkaerbesab-rotcello cv )rb (o bc i c au01 =0 5--v egatlovnwodkaerbesab-rettim ev )rb (o be i e au01 =0 . 6--v tnerrucffotucrotcello ci obc v bc ,v03= v bc t,v03= a 051= o c -- 51 0.5 an au scitsiretcarahcno niagtnerrucc dh ef i c v,am0.2= ec v5 =0 0 2- 0 5 4- egatlovnoitarutasrettime-rotcello cv )tas(ec i c i,am01= b am5.0= i c i,am001= b am0.5= - - - 52.0 6.0 v egatlovnoitarutasrettime-esa bv )tas(eb i c i,am01= b am5.0= i c i,am001= b am0.5= 6.0 8.0 - - 9.0 0.1 v egatlovrettime-esa bv )no(e b i c v,am2= ec v0.5= i c v,am01= ec v0.5= 085 - 066 - 007 077 vm scitsiretcarahclangis-llams tcudorphtdiwdnab-niag-tnerru cf t i c v,am01= ec hm001=f,cdv0.5= z 00 1--h m z ecnaticapactuptu oc obo v bc hm0.1=f,v01= z -- 5 . 4f p erugifesio nf n i c v,am2.0= ec ,cdv0.5= r s k0.2= ? hk0.1=f, z , h002=wb z -- 0 1b d BC847BFN3
page . 3 rev.0.4-aug.17.2009 electrical characteristics curve i , collector current(madc) c hfe, normalized dc current gain 0.2 0.2 0.4 0.6 0.8 1.5 0.3 1.0 2.0 10 20 50 100 200 figure 1. normalized dc current gain 0.5 5.0 1.0 2.0 v =10v t=25c ce a o i , collector current(madc) c 0.5 0.2 0.3 0.7 0.1 0 0.2 0.4 0.6 0.8 1.0 v, voltage (volts) figure 2. "saturation" and " on " voltages 1.0 2.0 3.0 7.0 5.0 10 20 50 100 70 30 t=25c a o v (sat) @ i /i =10 be c b v (sat) @ i /i =10 ce c b v (on) @ v =10v be ce i= 10ma c i= 0ma c 2 0.02 0 0.4 0.8 1.2 1.6 2.0 0.1 1.0 10 20 50ma figure 3. collector saturation region i , base current (ma) b v , collector-emitter voltage (volts) ce 100ma 200ma t=25c a o -55 c to 125 c oo 0.2 i , collector current (ma) c vb, temperature coefficient (ma/ c) o figure 4. base-emitter temperature coefficient 2.8 2.4 2.0 1.6 1.0 1.2 1.0 10 100 cob cio t=25c a o 0.4 v , reverse voltage (volts) r figure 5. capacitance c, capacitance (pf) 0.6 0.8 1.0 2.0 1.0 2.0 30 50 7.0 10 4.0 10 20 40 6.0 8.0 v =10v t=25c ce a o 1.00.7 0.5 2.0 3.0 i , collector current (madc) c ft, current-gain-bandwidth product (mhz) figure 6. current-gain-bandwidth product 5.0 7.0 50 30 40 60 80 10 20 30 20 100 200 300 400 BC847BFN3
page . 4 rev.0.4-aug.17.2009 electrical characteristics curve singel pulse duty cycle, d-t1/t2 figure 7. thermal response t, time(ms) r(t), transient thermal resistance(normalized) 1.0m 100k 10k 1.0k 100 10 1.0 0 0.001 0.01 0.1 1.0 z (t)=r(t) r r =328 c/w max d curves apply for power pulse train shown read time at t t -tc=p r (t) ja ja ja 1 j(pk) (pk) jc o t1 t2 p(pk) d-0.5 0.1 0.2 0.05 0.02 0.01 bonding wire limit thermal limit second breakdown limit v , collector-emitter voltage(v) ce -1.0 -2.0 -5.0 -5.0 -10 -10 -50 -30 -45 -65 -100 -100 -200 i , collector current (ma) c figure 8. active region safe operating area t=25c a o bc558 bc557 bc556 t=25c j o 3ms 1s the safe operating area curves indicate ic-vce limits of the transistor that must be observed for reliable operation. collector load lines for specific circuits must fall below the limits indicated by the applicable curve. the data of figure 26 is based upon tj(pk)=150 c; tc or ta is variable depending upon conditions. pulse curves are valid for duty cycles to 10% prodided tj(pk) < 150 c. tj(pk) may be calculated from the data in figure 25. at high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary break-down. o o BC847BFN3
page . 4 rev.0.4-aug.17.2009 legal statement copyright panjit international, inc 2009 the information presented in this document is believed to be accurate and reliable. the specifications and information herein are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. mounting pad layout order information ? packing information t/r - 8k per 7" plastic reel 0.02 (0.70) 8 0.02 (0.68) 7 0.043 (1.10) 0.017 (0.42) 0.010 (0.26) 0.004 (0.10) 0.024 (0.60) 0.010 (0.25) dfn 3l dfn 3l BC847BFN3
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